7月21日，韩国贸易、工业和能源部（Ministry of Trade, Industry and Energy，MOTIE）宣布，其于2017年开始的功率半导体商业化项目迄今为止已带来390亿韩元（约合2.2亿元人民币）的销售额。 

该项目计划于2023年结束，韩国政府在该项目上投资总计836亿韩元，旨在生产基于硅和化合物的功率半导体。韩国政府于2019年与釜山国立大学成立了一个工作组，并在该大学生产了6英寸SiC晶圆原型。

BusinessKorea报道指出，从2019年到今年5月，参与该项目的公司销售额达到390亿韩元。其中一家公司开发了一种用于物联网设备的高效电源管理芯片，在此期间的销售额为210亿韩元。另一家从汽车转向芯片研究的公司与国内一家汽车制造商签订了供应合同，销售额约为80亿韩元。

MOTIE表示，“在这些成就的基础上，这些公司正在吸引越来越多的SiC投资，扩大SiC芯片和模块的使用，并改进与GaN相关的工艺技术等等，以提高他们在化合物半导体行业的增长潜力。”

本文节选自 爱集微《韩国功率半导体商业化项目销售额已达390亿韩元》

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TRinno Technology和iA Semiconductor一直为全球有价值的客户提供高效可靠的电源器件和系统解决方案。为满足家电、工业电机驱动、可再生能源、汽车等多个行业不断增长的需求、我们正在努力开发包括新一代SiC功率器件技术和Si功率器件技术在内的创新技术。作为功率半导体的革新者、我们致力于为电力电子行业的各种新兴应用创造一流的元器件和系统解决方案、以满足市场的需求。

TRinno Technology and iA Semiconductor have been providing highly efficient and reliable power device and system solutions to valuable customers around the world. In order to meet the increasing demands from a variety of business sectors from home appliance, industrial motor drive, renewable energy, and automotive, we are striving to develop innovative technologies including next generation SiC power device technology as well as Si power device technology. As an innovators of power semiconductors, for various emerging applications in power electronics industry, we are committed to create the best-in-class device and system solutions for the needs of the market.

PCIM Asia 2021产品展示：

1.  绝缘栅双极晶体管IGBT

IGBT产品电压范围在600V - 1700V之间，是硅功率半导体器件的代表器件，广泛应用于各种功率应用领域。我们拥有多种IGBT产品组合，包括基于超薄晶片工艺技术的 Trench FS IGBT (场截止沟槽IGBT)以及RC IGBT(反向导电IGBT)。

As the representative device in Silicon power semiconductor devices, IGBT products with a voltage range of 600V to 1700V are widely used in various power applications. We have a diverse portfolio of IGBT products including trench FS (fieldstop) IGBT as well as RC (reverse conducting) IGBT based on ultra-thin-wafer process technologies.

2.  快恢复二极管FRDL

根据不同的应用，二极管需要不同的反向恢复特性。我们提供的二极管产品电压范围在600V到1200V，具有非常低的反向恢复电荷和柔软特性。在我们的产品组合中也提供导通状态电压降小的二极管。我们基于1200V的超薄晶片工艺显示出非常优异的性能，短阴极版本可用于柔软度至关重要的应用。

Depending on the applications, diodes require different reverse recovery characteristics. We offer the diode products in a voltage range of 600V to 1200V that exhibit very low reverse recovery charge and softness characteristics. The diodes with low on-state voltage drop are also available in our product portfolio. Our ultra-thin-wafer process based 1200V diodes show very excellent performance and the shorted cathode version are available for the applications where the softness is essential.

3. 碳化硅元器件SiC Devices

我们建立了电压为600V - 1700V的SiC Diode（碳化硅二极管）和SiC MOSFET(碳化硅金氧半场效晶体管）的技术平台，作为新一代电源器件解决方案。为了满足可再生能源和电动汽车应用对高可靠、高效的动力器件解决方案日益增长的需求，我们不断开发先进的SiC器件技术。

We established the technology platform for SiC diode as well as SiC MOSFET with a voltage of 600V to 1700V as a next generation power device solution. In order to meet the growing demands for highly reliable and efficient power device solutions from renewable energy and electric vehicle applications, we continue to develop advanced SiC device technologies.

            绝缘栅双极晶体管                                                                                          快恢复二极管                                                                                  碳化硅元器件

以非存储电力半导体为中心，开益禧半导体（上海）有限公司长期与国内屈指可数的家电、汽车制造企业合作，提高向中国、日本、美国的出口比重，正在跃身为国际企业。目前通过12个当地法人及海外营业网供应产品，通过与全球大型流通公司的合作，不断扩张全球网络。

Established in 1969, KEC Corporation is a S.Korea leading semiconductor company with the main product of power semiconductor. KEC strives to providing the finest products as well as help improve the quality of life for all.

PCIM Asia 2021产品展示：

1. Power Discrete Semiconductor

KEC offers a broad portfolio of power discrete devices for reliable, robust and power efficient automotive, industrial and consumer applications, including MOSFET, IGBT, SiC, GaN, DIODE and BJT.

2. Power IC

KEC's Power IC product portfolio includes gate drivers, AC/DC, DC/DC, LDOs. KEC's innovative power management technology solutions enhance the performance and reliability of a variety of applications including automotive, industrial and consumer products.

                      Power Discrete Semiconductor                                                                                                    Power IC

细继光电株式会社旨在通过提供更智能、更环保、信息量更大的功能，以最先进的 M-FAB 技术为全球福利做出贡献。细继光电株式会社独特的M-FAB架构构建了ESD、Sensor、Power、RF & Foundry四大典型板块。

Sigetronics aims to contribute to the worldwide welfare with state-of-the-art M-FAB technology through provision of smarter, greener, and even more informative functions. Our unique structure of M-FAB has constructed four typical sectors of ESD, Sensor, Power, and RF & Foundry.

PCIM Asia 2021产品展示：

1. ESD

Number One Market Share of ESD Protection for LEDs. Unique Products and Strong Competitiveness in 6” Mass Production.

2. Sensor

First, Sole Vendor Providing APD Array for LiDAR Application in Korea. One of A Few Suppliers (First Sensor, Hammamatsu) for LiDAR.

3. Power

Revolutionary, Emerging GaN Power Semiconductor Technology. First, Sole Mover Providing GaN Power-FET Technology In Korea.

Power Cube Semi Co., Ltd.是一家专注节能和安全的功率半导体公司。我们的总体策略涵盖差异化经营策略和未来发展业务定位等方面。我们制定有详细的业务策略，公司主要提供零部件设计、外包、定制产品组合和系统等整体解决方案，以此来降低客户成本。利用这些策略，我们通过向电力半导体、电动车辆、汽车电气零部件、可再生能源核心零部件等新兴市场供应我们的产品，为国内外功率半导体行业做出了巨大贡献。

Power Cube Semi Co., Ltd. is a power semiconductor company specializing in energy saving and safety. It has a big strategy of differentiated business strategy and future growth business positioning. We have a detailed business strategy to reduce the cost of customers through total solution that provides parts design, outsourcing, Customize PKG and System. Through these strategies, we have contributed to the domestic and overseas power semiconductor industry by supplying our products to the emerging markets of electric power semiconductors, electric vehicles, automobile electric parts, and core parts for renewable energy.

PCIM Asia 2021产品展示：

1. P3CD06065H

- SiC Power Diode  - Fast switching through Zero Reverse Recovery current 

- It has fast reverse recovery time by applying to the power system. 

- SiC diode be applied to the power system, high-frequency operation becomes possible, which leads to a fast reverse recovery time, thereby reducing passive elements. 

- Please contact us for other rated pkg and products.

2. PSF50065B< 650V 50A 70mΩ Si Super junction MOSFET>

- Si Super junction MOSFET with FRD(Fast Recovery Diode) 

- PowerCubeSemi’s second generation of high voltage Super Junction MOSFET that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance 

- This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. 

- Consequently, the combination of Super Junction MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency

3. PSM10065H< 650V 10A 380mΩ Si Super junction MOSFET>

- Si Super junction MOSFET 

- PowerCubeSemi’s second generation of high voltage Super Junction MOSFET that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance 

- This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. 

- Consequently, the combination of Super Junction MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

    P3CD06065H                                           PSF50065B                                          PSM10065H

JMJ 韩国株式会社作为高科技半导体元件和自动化设备的制造商，通过雇用当地员工为当地社区做出贡献。公司获得政府机构颁发，获得全球半导体公司TI（德州仪器）颁发的最佳供应商奖，目前只有两家公司（JMJ、LG）获得该奖项。

JMJ Korea as a manufacturer of high-tech semiconductor components and automation equipment, contributes to the local community by hiring local employees. The company has been awarded by government agencies and has been awarded the best supplier award from TI (Texas Instruments), a global semiconductor company, which only two companies (JMJ, LG) can.

‘07 Founded JMJ KOREA

‘11 Achieved 2M USD export revenue

‘13 Established RnD LAB

‘14 Achieved at 5M USD export revenue

‘17 Awarded 2017 Supplier Excellence from TI

‘17 Achieved 12M USD export revenue

‘18 Exporting Award from Korea Government

‘19 Certified IATF16949

‘20 Expand the new factory

PCIM Asia 2021产品展示：

1. MCM C2000S

High UPH with high density reel clips. High quality with burr up singulation. Implement pre-bond inspection for solder paste before clip attach & post bond inspection after clip attach. Implement 2D strip mapping system to edit strip map after pre-bond and post bond inspection.

2. Stamped & Etched reel clip/Etched Gang clip

Clip is a material that inter-connects die and lead/slug requiring for power semiconductor packaging with lower cost and higher thermal and electrical conductivity than traditional Au wiring method.

3. Power Semiconductor Package

JMJ can support prototype power module sample for case or molded power module with Au/Cu/Al wire, Ribbon wire and clip interconnection. Advanced power module including IGBT, MOSFET, SiC, Si/SiC Hybrid, Diode, SBD, and Intelligent Power Module (IPM) with gate driver IC.  Also, we can build the standalone package type with clip interconnection which are TO247, TO252, TO263, LFPAK and SOT1220.  We can support the clip interconnection without top metallization on die.

作为下一代新增长动力产业战略的一部分而成立的功率半导体商用化中心(PSCC)位于釜山，为了克服韩国功率半导体产业的技术局限性, 釜山TP建立了FAB工艺开发研究平台和可靠性中心等，以完善韩国功率半导体产业的生态系统。

Power Semiconductor Commercialization Center (PSCC) established as part of the next-generation new growth engine industry is located in Busan, and its purpose is to build FAB process R&D platforms and reliability centers to overcome the technological limits of the power semiconductor industry and thereby complete the ecosystem of the power semiconductor industry in Korea.

PCIM Asia 2021产品展示：

1. Box-Profile implementation through Multi-Implanting

2. Improvement of SiC Surface Roughness- High-Temperature Activation Process

3.SiC Wafer GOI (Gate Oxide Integrity)

4. SiC Trench Etching Profile

5. Wafer thinning process using SiC Grind equipment

6. Formation of SiC N Ohmic Contact using laser anneal